PART |
Description |
Maker |
PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存)
|
NEC, Corp.
|
MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 |
FLASH MEMORY 16M (2M x 8) BIT CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
TC58V64DC |
16M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
MX25L1608EM2I12G |
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
MBM29LV160T-90PFTN MBM29LV160T-90PFTR MBM29LV160B- |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT
|
SPANSION[SPANSION]
|
MX25L1606EM1I-12G MX25L1606EM2I-12G MX25L1606EMI-1 |
3V, 16M-BIT [x 1/x 2] CMOS SERIAL FLASH MEMORY
|
Macronix International
|
TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|
NN5216805 |
(NN5216405 / NN5216805) CMOS 16M-Bit SDRAM
|
Nippon Steel Semiconductor
|
K3N5C1000D-DGTC |
16M-Bit (2M x 8/1M x 16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|